Show transcribed image text 2. A Si crystal was doped with phosphorus (P). The donor concentration is 10^15 cm^-3. a. Find the conductivity and resistivity of the crystal at 300 K. Assume electron mobility is 1350 cm^2V^-1s^-1 and hole mobility is 450 cm^2V^-1s^-1. Intrinsic concentration ni=10^10 cm^-3. b. Next step, boron (B) with a concentration of 4×10^14 cm^-3 was added into this Si crystal. After compensation, the final Si crystal is n-type or p-type? What is the electron concentration and hole concentration?
https://trustedpaperwriters.com/wp-content/uploads/2019/12/157544039158860773-300x54.png 0 0 Steve Kamau https://trustedpaperwriters.com/wp-content/uploads/2019/12/157544039158860773-300x54.png Steve Kamau2021-05-16 07:15:122021-05-16 07:15:12Show transcribed image text 2. A Si crystal was doped with phosphorus (P). The donor concentration i