Show transcribed image text 2. A Si crystal was doped with phosphorus (P). The donor concentration i

Show transcribed image text 2. A Si crystal was doped with phosphorus (P). The donor concentration is 10^15 cm^-3. a. Find the conductivity and resistivity of the crystal at 300 K. Assume electron mobility is 1350 cm^2V^-1s^-1 and hole mobility is 450 cm^2V^-1s^-1. Intrinsic concentration ni=10^10 cm^-3. b. Next step, boron (B) with a concentration of 4×10^14 cm^-3 was added into this Si crystal. After compensation, the final Si crystal is n-type or p-type? What is the electron concentration and hole concentration?

 

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