semi-conductor PROBLEMS P9.1 Compare the ratio of hole current to electron current for Schottky diod

semi-conductor PROBLEMS P9.1 Compare the ratio of hole current to electron current for Schottky diodes fabricated on n-type silicon with a doping concentration of 1016 cm-3 using (a) Au (dm = 08 V) and (b) Al(OBn = 0.6 V). Also compare the reverse saturation current densities of the two Schottky diodes

 

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