Problem#5. 16pts (a) For an FDSOI MOSFET with thick BOX at T = 300K, is the long-channel subthreshol

Problem#5. 16pts (a) For an FDSOI MOSFET with thick BOX at T = 300K, is the long-channel subthreshold swing usually larger, smaller, or (b) Continued from (a) and if the channel length becomes short, will the subthreshold swing of the FDSOI device usually be larger, smaller, or equal to the bulk counterpart? Why? (3pts) (c) For a given oxide thickness, provide two ways to improve the electrostatic integrity of a short-channel FDSOI device. (3pts) equal to the bulk counterpart? Why? (3pts) gale Malata D Mviee A. SiO. gato dielectric

 

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