Problem 2: pn Reverse Breakdown Consider a p^+ n Si step junction diode with n-side doping N_ D = 10

Problem 2: pn Reverse Breakdown

Consider a p^+ n Si step junction diode with n-side doping N_D = 10^17 cm-3

and T = 300K:

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Problem 5: pn-Junction – Small Signal Model For the diode in Problem 2 biased at VA = 0.7 V: a) What is the diode conductance, G? b) Calculate the depletion charge, i.e. the magnitude of the charge stored on either side of the metallurgical junction in the depletion region c) What is the depletion capacitance, C? d) Calculate the magnitude of the minority-carrier charge stored in the quasi-neutral p-type region. e) What is the diffusion capacitance, CD? 激活V 转到“设置 f) How would your answers to parts (a), (c), and (e) change if VA were to be increased?

 

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