Problem 2: pn Reverse Breakdown
Consider a p^+ n Si step junction diode with n-side doping N_D = 10^17 cm-3
and T = 300K:
Save your time - order a paper!
Get your paper written from scratch within the tight deadline. Our service is a reliable solution to all your troubles. Place an order on any task and we will take care of it. You won’t have to worry about the quality and deadlinesOrder Paper Now
Problem 5: pn-Junction – Small Signal Model For the diode in Problem 2 biased at VA = 0.7 V: a) What is the diode conductance, G? b) Calculate the depletion charge, i.e. the magnitude of the charge stored on either side of the metallurgical junction in the depletion region c) What is the depletion capacitance, C? d) Calculate the magnitude of the minority-carrier charge stored in the quasi-neutral p-type region. e) What is the diffusion capacitance, CD? 激活V 转到“设置 f) How would your answers to parts (a), (c), and (e) change if VA were to be increased?