helpp Problem 5b. – 10 Points total A semiconductor material has an energy gap of 0.75 eV, effective

helpp
Problem 5b. – 10 Points total A semiconductor material has an energy gap of 0.75 eV, effective masses mn= 0.04 mo and mp= 0.22 mo, where mo is the free electron mass = 9.11 x 103 [kg]. Assume complete ionization. a) Let the temperature be T = 350 °K. The material is un-doped. Find the intrinsic Fermi level EFi and carrier concentration ni- pi (4 points) b) Let the temperature be T = 350 K. The material is doped with donors at concentration No 5 x 1015 [cm3]. Assuming Boltzmann statistics applies, find: 1) the electron concentration n, (2 points) (2 points) (2 points) 2) the hole concentration p and 3) the position of the Fermi level EF.

 

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