An n-type silicon sample at RT is 2 cm long and has a cross sectional area of 0.1 cm” Calculate

An n-type silicon sample at RT is 2 cm long and has a cross sectional area of 0.1 cm” Calculate the position of the Fermi energy level with respect to the intrinsic Fermi energy level given that the sample is doped with doping concentrations of: N4 2X107 cm3and N 3X10″cm3 PART 2 For the above sample, taking the electron mobility for the above sample to be 1000 cm7/V-s and |the hole mobility to be 300 cm2/V-s. calculate the total drift current through the sample if an electric field of 300V/cm is applied across the sample.

 

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